超高速VLSI中多晶硅发射极晶体管串联电阻的测量

本文对目前流行的测量晶体管串联电阻的常规方法进行了理论分析和实验验证，结果表明，用常规方法测量多晶硅发射极晶体管串联电阻的误差很大。

Measurement of Series Resistances in Polysilicon Emitter Bipolar Transistors for High Speed VLSI

The commonly used methods to measure series resistances in bipolar transistors,including the open-collector method of extraction for emitter series resistance Re, the Ic-Vbe method of measurement of base series resistance Rb and the Forced-Beta method of getting collector series resistance Rc, are analyzed and tested. The results show that the above methods aren't available to measure series resistances in polysilicon emitter bipolar transistors. A new set of measurement methods of series resistances in bipolar transistors is presented, it overcomes conventional method' s troubles and is suitable for measurement of series resistances in polysihcon emitter transistors for high speed VLSI.