Metal-clad ridge waveguide structure InGaP/InGaAIP visible laser diodes |
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Authors: | T Kim M S Oh D H Shin J W Lee J Y Kim |
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Institution: | (1) Materials and Devices Research Center, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea |
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Abstract: | InGaP/InGaAIP visible-light laser diodes with a metal-clad ridge waveguide structure have been fabricated. Compressively strained SCH-MQW structures were grown by low-pressure MOCVD and the lasing wavelength was 690 nm. The threshold current was 28 mA at 25°C for a 400 m cavity and 5 m stripe width. CW operation was obtained as the cleaved device by employing thick gold layer as a heat spreader. The light-output power versus CW current was linear up to a maximum light output power of 38 mW. Stable operation of the fundamental transverse optical mode was maintained up to 30 mW. These results show that this metal-clad ridge waveguide structure provides sufficient current confinement even under high light output power operation. |
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