| 硅微条探测器的辐射损伤试验 |
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| 引用本文： | 顾维新,R.Lipton. 硅微条探测器的辐射损伤试验[J]. 中国物理 C, 1997, 21(4): 292-296 |
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| 作者姓名： | 顾维新 R.Lipton |
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| 作者单位： | 中国科学院高能物理研究所 |
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| 摘 要： | 测量了硅微条探测器在辐照前后的坪曲线、脉冲高度与偏置电压的关系，及辐照后的总漏电流和黑洞的大小.
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| 关 键 词： | 硅微条探测器 辐射损伤 黑洞 耗尽电压 |
Radiation Damage Tests of Silicon Microstrip Detector |
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| Gu Weixin. Radiation Damage Tests of Silicon Microstrip Detector[J]. High Energy Physics and Nuclear Physics, 1997, 21(4): 292-296 |
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| Authors: | Gu Weixin |
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| Abstract: | This paper measured the plateau curve,height of pulse related with bias voltage of silicon microstrip detector which was before and after exposed,and the leakage current as well as size of `black hole' after exposed. |
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| Keywords: | silicon microstrip detector radiation damage `black hole' depletion voltage. |
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