Heteroepitaxial growth of thin InAs layers on GaAs(1 0 0) misoriented substrates: A structural and morphological comparison |
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Authors: | H Ben Naceur I Moussa O Tottereau A Rebey B El Jani |
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Institution: | aFaculté des Sciences de Monastir, Monastir 5019, Tunisia;bCNRS–CRHEA rue Bernard Grégory, 06560 Valbonne, France |
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Abstract: | Thin InAs epilayers were grown on GaAs(1 0 0) substrates exactly oriented and misoriented toward 1 1 1]A direction by atmospheric pressure metalorganic vapor phase epitaxy. InAs growth was monitored by in situ spectral reflectivity. Structural quality of InAs layers were studied by using high-resolution X-ray diffraction. No crystallographic tilting of the layers with respect to any kind of these substrates was found for all thicknesses. This result is discussed in terms of In-rich growth environment. InAs layers grown on 2° misoriented substrate provide an improved crystalline quality. Surface roughness of InAs layers depend on layer thickness and substrate misorientation. |
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Keywords: | MOVPE InAs HRXRD Spectral reflectivity AFM |
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