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Quantum optical studies on individual acceptor bound excitons in a semiconductor
Authors:Strauf S  Michler P  Klude M  Hommel D  Bacher G  Forchel A
Institution:Institute of Solid State Physics, Semiconductor Optics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany.
Abstract:We demonstrate the generation of triggered single photons at a predetermined and well defined energy using the radiative recombination of single nitrogen-bound excitons in a semiconductor. The nitrogen atoms are embedded in a ZnSe quantum well structure and were excited by nonresonant optical pumping (82 MHz) at low temperature (4 K). We find resolution-limited photoluminescence lines (280 micro eV) which display photon antibunching under continuous optical pumping. Our results also suggest that single nitrogen-bound excitons are well suited for cavity quantum electrodynamics experiments.
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