有源层受主浓度对InGaAsP/InP双异质结发光管特性的影响

本文研究了有源层受主浓度(Pa)对InGaAsP/InP双异质发光管特性的影响。有源层受主浓度Pa≈2×1017～1×1018cm-3的器件,具有较大的光输出功率P≥1mW;截止频率f?为30～80MHz,并且有正常的Ⅰ-Ⅴ特性。有源层浓度高于上述浓度的器件,光输出功率降低,并且具有异常的Ⅰ-Ⅴ特性。在器件光谱半宽△λ=(λ2/1.24)nkT关系式中,n值是有源层受主浓度(Pa)的函数。上述结果表明:有源层受主浓度(Pa)是影响器件特性的重要因素之一。

THE DEPENDENCE OF CHARACTERISTICS OF InGaAsP/InP DH LEDs ON ACCEPTOR CONCENTRATION OF ACTIVE LAYER

In this report, the characteristics of InGaAsP/InP Burrus type DH LEDs emitting at 1.3μm are described. In particular, the dependence of characteristics of the devices (i.e. VF, VB, △λ, P and fc) on material properties, such as acceptor concentration (Pa) has been examined. The InGaAsP DH wafers used for fabrication of the LEDs were grown by LPE technique. The structure of a wafer consists of three or four layers. They are a n-InP buffer layer 5-6μm thick, a n-InGaAsP undoped active layer 0.7-2.5μm thick, a p-InP confining layer 1-2μm thick and a p-InGaAsP layer for ohmic contact. The carrier concentration profile of the DH wafer was measured directly by the electrochemical C-V method. The InGaAsP/InP DH LEDs have been fabricated. The device output power is about≥1mW at 100mA, emitting wavelength A is l.3nm. The experimental results are as follows.