| 强电磁脉冲上升时间对RS触发器损伤阈值仿真分析 |
| |
| 引用本文： | 张子剑, 陈曦, 李茜华, 等. 强电磁脉冲上升时间对RS触发器损伤阈值仿真分析[J]. 强激光与粒子束, 2017, 29: 083202. doi: 10.11884/HPLPB201729.160541 |
| |
| 作者姓名： | 张子剑 陈曦 李茜华 王頔 龚博 |
| |
| 作者单位： | 1.北京宇航系统工程研究所, 北京 1 00076;;;2.中国运载火箭技术研究院, 北京 1 00076 |
| |
| 摘 要： | 对RS触发器中金属-氧化物-半导体场效应管（MOSFET）的烧毁作用进行研究,通过仿真分析在不同入射端口、不同上升时间的条件下RS触发器的损伤阈值,结合其内部温度分布图完成失效机理分析,进而得出对于上升时间长的强电磁脉冲,需要更高的峰值场强、更长的时间才能将RS触发器烧毁。
|
| 关 键 词： | 上升时间 RS触发器 电磁脉冲 损伤阈值 失效机理 |
| 收稿时间： | 2016-12-02 |
| 修稿时间： | 2017-03-20 |
Simulation analysis of strong electromagnetic pulse rise time on damage threshold of RS flip-flop |
| |
| Zhang Zijian, Chen Xi, Li Qianhua, et al. Simulation analysis of strong electromagnetic pulse rise time on damage threshold of RS flip-flop[J]. High Power Laser and Particle Beams, 2017, 29: 083202. doi: 10.11884/HPLPB201729.160541 |
| |
| Authors: | Zhang Zijian Chen Xi Li Qianhua Wang Di Gong Bo |
| |
| Affiliation: | 1. Beijing Institute of Aerospace Systems Engineering,Beijing 100076,China;;;2. Logistics Center,China Academy of Launch Vehicle Technology,Beijing 100076,China |
| |
| Abstract: | This paper investigates the thermal run away mechanism of metal oxide semiconductor field effect transistors (MOSFETs) in RS triggers. Simulations are performed to study the RS trigger damage threshold under different gate input and rising time, and the internal temperature distribution is plotted. Through the analysis, this paper concludes that the strong electromagnetic pulses with longer rise time should have higher peak intensity and longer time to damage RS triggers. |
| |
| Keywords: | rise time RS flip-flop electromagnetic pulse damage threshold failure mechanism |
|
| 点击此处可从《强激光与粒子束》浏览原始摘要信息 |
|
点击此处可从《强激光与粒子束》下载全文 |
|
