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碲化镉薄膜太阳电池中的关键科学问题研究
引用本文:王德亮, 白治中, 杨瑞龙, 侯泽荣. 碲化镉薄膜太阳电池中的关键科学问题研究[J]. 物理, 2013, 42(05): 346-352. DOI: 10.7693/wl20130506
作者姓名:王德亮  白治中  杨瑞龙  侯泽荣
作者单位:1.中国科学技术大学 合肥微尺度物质科学国家实验室(筹)  中国科学院能量转换材料重点实验室 合肥 230026
摘    要:文章对CdTe薄膜太阳电池中的4个关键科学问题进行了讨论,并对电池器件的性能进行了研究,其中包括高质量硫化镉薄膜、背接触层、CdS/CdTe界面和CdCl2热处理性能的研究。文章作者研究了背电极接触层中Cu掺杂含量对电池性能的影响,通过改变背接触层中Cu的含量,可以改变Cu与Te反应产生的物相成分,从而发现以Cu1.4Te为主导的背接触缓冲层能有效地减少电池I—V 曲线中的“翻转”(roll-over)现象,同时能有效地降低背接触势垒。此外,还研究了CdS/CdTe界面的CdCl2热处理反应,发现当热处理温度高于350℃时,CdS与CdTe之间的互扩散开始发生,此温度对应于CdS由立方相转变为六方相;而在550℃热处理后,S 和Te 互扩散形成的CdSxTe1-x 化合物,其x 值高达11%。通过优化电池制备工艺,获得了在AM1.5标准光源下高达14.6%的CdTe电池转换效率。

关 键 词:太阳电池  碲化镉  薄膜  高转化效率
收稿时间:2012-06-28

Critical issues of CdTe thin film solar cells
WANG De-Liang, BAI Zhi-Zhong, YANG Rui-Long, HOU Ze-Rong. Critical issues of CdTe thin film solar cells[J]. PHYSICS, 2013, 42(05): 346-352. DOI: 10.7693/wl20130506
Authors:WANG De-Liang  BAI Zhi-Zhong  YANG Rui-Long  HOU Ze-Rong
Affiliation:1.Hefei National Laboratory for Physical Sciences at the Microscale,Key Laboratory of Energy Conversion Materials,University of Science and Technology of China,Hefei 230026,China
Abstract:Four critical issues related to high efficiency CdTe thin film solar cell are discussed and studied: the quality of CdS films, back contact, CdS/CdTe interface formation, and CdCl2 heat treatment. Through control of the copper doping in the back contact we have eliminated the roll-over phenomenon in the I-V curve. The back contact barrier was reduced by formation of a Cu1.4Te compound which has a good contact with CdTe. Systematic investigations showed that relatively strong interdiffusion at the CdS/CdTe interface began to occur at around 350°C. This temperature coincides with the CdS phase transformation from cubic to hexagonal. Both S- and Te-rich CdSxTe1-x alloy formed at the interface, with x as much as 11%. Through optimization of the cell fabrication process, a CdTe solar cell efficiency as high as 14.6% has been obtained.
Keywords:solar cell  CdTe  thin film  high efficiency
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