| 稀释磁性半导体Cd0.9Mn0.1Te晶体的退火改性 |
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| 引用本文： | 郝云霄,孙晓燕,张继军,介万奇.稀释磁性半导体Cd0.9Mn0.1Te晶体的退火改性[J].人工晶体学报,2009,38(3):570-575. |
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| 作者姓名： | 郝云霄 孙晓燕 张继军 介万奇 |
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| 作者单位： | 西北工业大学材料学院,西安,710072 |
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| 摘 要： | 运用缺陷化学原理近似计算了Cd0.9Mn0.1Te晶体的点缺陷浓度,得到了晶体成分与理想化学计量比偏离最小时的退火条件.利用该退火条件,指导了Cd0.9Mn0.1Te晶体的两温区退火实验,并分析了退火对晶片性能的影响.结果表明:在973 K,Cd气氛下对Cd0.9Mn0.1Te晶片退火140 h后,晶片(111)面的X射线回摆曲线的FWHM值由退火前的168.8' 降至108',红外透过率由退火前48;提升到64;,接近晶体的理论透过率,电阻率也由退火前的2.643×105 Ω·cm提高到4.49×106 Ω·cm.由此可见,对生长态的Cd0.9Mn0.1Te晶体进行退火实验能提高晶体的结晶质量,补偿晶体的Cd空位点缺陷,使晶体成分接近理想的化学计量比.
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| 关 键 词： | Cd0.9Mn0.1Te晶体 点缺陷 退火 Te沉淀相 结晶质量 |
Modification of Diluted Magnetic Semiconductor Cd_(0.9)Mn_(0.1) Te Crystal through Annealing |
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| HAO Yun-xiao,SUN Xiao-yan,ZHANG Ji-jun,JIE Wan-qi.Modification of Diluted Magnetic Semiconductor Cd_(0.9)Mn_(0.1) Te Crystal through Annealing[J].Journal of Synthetic Crystals,2009,38(3):570-575. |
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| Authors: | HAO Yun-xiao SUN Xiao-yan ZHANG Ji-jun JIE Wan-qi |
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| Institution: | School of Material Science and Engineering;Northwestern Polytechnical University;Xi'an 710072;China |
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| Abstract: | The point defect density of Cd0.9Mn0.1Te crystal was calculated approximately by the quasi-chemical theory,and obtained the optimum annealing condition in which the deviation from stoichiometry of the crystal is the least.The two-temperature-zone-annealing experiment was done under this condition and the effects of annealing on the properties of Cd0.9Mn0.1Te were analyzed in detail.The results show that when the as-grown crystal was annealed for 140 h in Cd atmosphere at 973 K,the full-width-at-half-maximum... |
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| Keywords: | Cd0 9Mn0 1Te crystal point defect annealing Te precipitate crystal quality |
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