PLD synthesis of GaN nanowires and nanodots on patterned catalyst surface for field emission study |
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| Authors: | D. K. T. Ng M. H. Hong L. S. Tan Y. W. Zhu C. H. Sow |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore;(2) Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore, 117608, Singapore;(3) National University of Singapore, Nanoscience and Nanotechnology Initiative, S13, 2 Science Drive 3, Singapore, 117542, Singapore;(4) Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore |
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| Abstract: | Patterned gallium nitride nanowires and nanodots have been grown on n-Si (100) substrates by pulsed laser deposition. The nanostructures are patterned using a physical mask, resulting in regions of nanowire growth of different densities. The field emission (FE) characteristics of the patterned gallium nitride nanowires show a turn-on field of 9.06 V/μm to achieve a current density of 0.01 mA/cm2 and an enhanced field emission current density as high as 0.156 mA/cm2 at an applied field of 11 V/μm. Comparing the peak FE current densities of both the nanowires and nanodots, the peak FE current density of nanowires is around 700 times higher than that of the peak FE current density of nanodots since nanodots have a lower aspect ratio compared to nanowires. The field emission results indicate that, besides density difference, crystalline quality as well as the low electron affinity of gallium nitride, high aspect ratio of gallium nitride nanostructures will greatly enhance their field emission properties. |
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| Keywords: | KeywordHeading" >PACS 52.38.Mf 81.07.-b 82.70.Uv |
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