Optical detection of magnetic resonance on anion antisites in indium phosphide

The paper describes the application of optically detected magnetic resonance (ODMR) methods to the identification of antisite defects in the III–V semiconductor InP. In III–V semiconductors the high abundance of nuclei with large nuclear spins greatly limits the resolution of magnetic resonance techniques. In particular, ODMR signals characteristic of the P_In antisite in InP with slightly differentg-values and hyperfine splitting have been observed. The corresponding centres cannot be distinguished with confidence without the higher resolution of electron-nuclear double resonance (ENDOR). Magnetic resonance signals of the antisite in InP are too weak to allow such measurements in the conventional detection mode, but using optically detected ENDOR (ODENDOR) in absorption as well as in emission, the isolated P_In antisite and at least one other antisite defect were identified. Moreover, the energy position of the P _In ⁺ /P _In ⁺⁺ level in the bandgap was determined from the optical transitions involved.