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ODMR study of recombination processes in ionic crystals and silicon carbide
Authors:P G Baranov  N G Romanov
Institution:1. A.F. Ioffe Physical-Technical Institute, Polytechnicheskaya ul.26, 194021, Leningrad, USSR
Abstract:The paper presents the results of optically detected magnetic resonance (ODMR) study of tunneling and photostimulated recombination processes in irradiated ionic crystals, observation of resonance effects using optically pumped F-centres, and investigation of spin-dependent recombination processes in silicon carbide doped with boron, aluminium, gallium and scandium.
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