| Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si（001） Studied by Conductive Atomic Force Microscopy |
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| 引用本文： | 吴荣,林健晖,张生利,杨鸿斌,蒋最敏,杨新菊. Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si（001） Studied by Conductive Atomic Force Microscopy[J]. 中国物理快报, 2008, 25(12): 4360-4363 |
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| 作者姓名： | 吴荣 林健晖 张生利 杨鸿斌 蒋最敏 杨新菊 |
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| 作者单位： | Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 60425411 and 10874030, the National Basic Research Programme of China under Grant No 2006CB921505, and Shanghai Science and Technology Commission. |
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| 摘 要： | Electrical properties of individual self-assembled GeSi quantum dots grown on Si substrates are investigated by using conductive atomic force microscopy at room temperature. By controlling the bias voltage sweep in a certain fast sweep rate range, a novel current peak is observed in the current-voltage characteristics of the quantum dots. The current peaks are detectable only during the backward voltage sweep immediately after a forward sweep. The current peak position and intensity are found to depend strongly on the voltage sweep conditions. This kind of current-voltage characteristic under fast sweep is very different from the ordinary steady state current behaviour of quantum dots measured previously. trapping in the potential well formed bottom Si substrate. The origin of this phenomenon by the quantum dot sandwiched can be attributed to the transient hole between the native oxide layer and the
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| 关 键 词： | 原子 GeSi Si 量子论 物理学 |
| 收稿时间： | 2008-07-11 |
Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy |
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| WU Rong,LIN Jian-Hui,ZHANG Sheng-Li,YANG Hong-Bin,JIANG Zui-Min,YANG Xin-Ju. Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy[J]. Chinese Physics Letters, 2008, 25(12): 4360-4363 |
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| Authors: | WU Rong LIN Jian-Hui ZHANG Sheng-Li YANG Hong-Bin JIANG Zui-Min YANG Xin-Ju |
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| Affiliation: | Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433 |
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| Abstract: | Electrical properties of individual self-assembled GeSi quantum dots grown on Si substrates are investigated by using conductive atomic force microscopy at room temperature. By controlling the bias voltage sweep in a certain fast sweep rate range, a novel current peak is observed in the current--voltage characteristics of the quantum dots. The current peaks are detectable only during the backward voltage sweep immediately after a forward sweep. The current peak position and intensity are found to depend strongly on the voltage sweep conditions. This kind of current--voltage characteristic under fast sweep is very different from the ordinary steady state current behaviour of quantum dots measured previously. The origin of this phenomenon can be attributed to the transient hole trapping in the potential well formed by the quantum dot sandwiched between the native oxide layer and the bottom Si substrate. |
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| Keywords: | 68.37.Ps 73.63.Kv 72.20.Jv |
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