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Analysis of pπ → dπ bonding in halogen compounds of silicon, germanium and tin
Authors:William L. Jolly
Affiliation:

Department of Chemistry, University of California, and the Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720. USA

Abstract:Halogen lone pair ionization potentials for the main-group IV compounds MX4 and MH3Cl are corrected for the effects of potencial and relaxation energy using the corresponding halogen core binding energies. The corrected data indicate significant pπ --- dπ bonding in MX4 (for M = Si, Ge and Sn), significant repulsion between the lone pairs and CH3 group in CH3Cl. and little or no pπ --- dπ bonding in SiH3Cl and GeH3Cl.
Keywords:
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