单一混合固态源PE-MOCVD法制备YSZ薄膜及其表征

采用等离子体增强的MOCVD技术,以均匀混合的金属β-二酮鳌合物固态源Y(DPM)₃和Zr(DPM)₄作为前驱物,在NiO/SDC多孔阳极和多孔-αAl₂O₃衬底上制备了氧化钇稳定的氧化锆(YSZ)薄膜.研究了两种衬底对成膜过程和膜的结构以及微结构的影响,讨论了源区输运机制及薄膜生长动力学.XPS分析结果表明,薄膜中Y和Zr元素的摩尔比低于原始混合源中的Y和Zr元素的摩尔比,当混合源中的Y和Zr元素的摩尔比约为0.35:1时,可以获得无定形态的8%YSZ薄膜,经高温焙烧转化为单一立方相,其晶粒大小约为100nm,薄膜的生长速率约为7nm/min.

Synthesis of YSZ Film by Solid Single Source PE-MOCVD Method and Characterization

Yttria-stabilized zirconia(YSZ) film was successfully deposited onto NiO/SDC and α-Y2O3 substrates by solid single-source PE-MOCVD from Y(DPM)3 and Zr(DPM)4.The influence of various substrates on the film growth and micro-structure was studied.The delivery mechanism of the precursors and the film growth kinetics were also discussed.The Y content in the film,which was found lower than that in the precursor mixture according to the XPS analysis was determined by the temperature of the sublimation region,the content in the mixture,and the precursor feeding rate.When fixing the precursor feeding rate at 1.2 mg/min and the temperature of sublimation region at 230-280 ℃,approximately 15%Y2O3 content in the precursor mixture was needed to deposit YSZ film of 8%Y2O3.The thin film is amorphous,and can be converted into single cubic phase after sintering at 1 100 ℃ for 3 h.The grain size is about 100 nm and the film growth rate is about 7 nm/min.