Defect properties of Ti-doped Cr2O3 |
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| Affiliation: | 1. AGH University of Science and Technology, Faculty of Materials Science and Ceramics, al. Mickiewicza 30, 30-059, Krakow, Poland;2. AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, al. Mickiewicza 30, 30-059, Krakow, Poland;3. AGH University of Science and Technology, International Centre of Electron Microscopy for Materials Science, al. Mickiewicza 30, 30-059 Krakow, Poland |
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| Abstract: | The defects in Cr2−xTixO3 (x = 0, 0.2 and 0.3) were studied by a combination of X-ray diffraction, density and electrical conductivity measurements supported by atomistic simulation. The results are consistent with the Ti being dissolved as Ti4+ compensated by Cr vacancies which associate to form complex defects of lower energy. Ti doping gives n-type semiconductivity due to a small concentration of Ti3+ in equilibrium with the complexes. |
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