Structural and electrical properties of ZnO-doped 8 mol% yttria-stabilized zirconia |
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| Institution: | 1. School of Science, Guizhou University, Guiyang 550003, China;2. University of Science and Technology of China, Hefei, 230026, China;1. Hubei Key Laboratory of Advanced Technology of Automotive Components (Wuhan University of Technology), Wuhan 430070, China;2. Center for Fuel Cell Innovation, School of Materials Science and Engineering, State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, China;3. Hubei Collaborative Innovation Center for Automotive Components Technology, Wuhan 430070, China;1. Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;2. Naval Materials Research Laboratory, Ambarnath, Thane, Mumbai 421506, India;1. Saint Petersburg State University, Universitetskya Nab 7/9St Petersburg, 199034, Russia;2. Institute of Problems of Mechanical Engineering V.O., Bolshoj pr., 61, St. Petersburg, 199178, Russia;3. Peter the Great St Petersburg Polytechnic University, St. Petersburg, 195251, Russia |
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| Abstract: | 8 mol% Yttria-stabilized zirconia (8YSZ) powder was prepared by coprecipitation. ZnO (0.5, 1.0, 2.0, 5.0, 10.0 wt.%) was added to the YSZ powder through a mechanical mixing method. The densification , microstructure and electrical properties of the YSZ ceramics sintered at 1300 °C for 2 h, were investigated. It was found that the small addition of ZnO was effective in reducing the sintering temperature and promoting the densification rate of the ceramics. The 5.0 wt.% ZnO-doped YSZ has ∼ 96% relative density, as compared to ∼ 89% relative density for the undoped sample. The total conductivity of 8YSZ was evidently increased by doping small amount of ZnO. For the 0.5 wt.% doped sample, the total conductivity of 2.89 × 10− 2 Ω− 1 cm− 1 and an increase of 120% in conductivity were observed at 800 °C, as compared to that of the undoped one. We also found that the grain boundary (GB) conductivity could be improved by small addition of ZnO. At intermediate temperature (∼ 300 °C), the maximum enhancement of GB conductivity was observed with 5.0 wt% ZnO dopant. Finally, the volume percentage of GB in the ceramics was estimated by the brick layer model. The possible mechanism related to the improved GB conduction of the YSZ due to the ZnO additions was discussed. |
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