Extraordinary fast oxide ion conductivity in La1.61GeO5−δ thin film consisting of nano-size grain |
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| Institution: | 1. Agrifood Campus of International Excellence (CeiA3), Department of Chemistry and Physics, University of Almeria, European Union Reference Laboratory for Pesticide Residues in Fruit and Vegetables, 04120 Almería, Spain;2. National Agricultural Technology Institute (INTA), Concordia Agricultural Experimental Station, Argentina;1. Joint International Research Laboratory of Animal Health and Food Safety of Ministry of Education & Single Molecule Nanobiology Laboratory (Sinmolab), Nanjing Agricultural University, Nanjing, Jiangsu 210095, China;2. College of Veterinary Medicine, Hunan Agricultural University, Changsha, Hunan 410128, China;3. School of Manufacture Science and Engineering, Key Laboratory of Testing Technology for Manufacturing Process, Ministry of Education, Southwest University of Science and Technology, Mianyang, Sichuan 621010, China;4. Advanced Institute of Micro-Nano Intelligent Sensing (AIMNIS), School of Electronic Information Engineering, Xi’an Technological University, Xi’an, Shaanxi 710032, China;5. OptiX+ Laboratory, School of Electronics and Information Engineering, Wuxi University, Wuxi, Jiangsu 214105, China;1. School of Public Health, Hebei Medical University, Shijiazhuang, 050017, China;2. State Key Laboratory of Toxicology and Medical Countermeasures, and Laboratory of Toxicant Analysis, Institute of Pharmacology and Toxicology, Academy of Military Medical Sciences, Beijing, 100850, China;3. State Key Laboratory of Toxicology and Medical Countermeasures, and Beijing Institute of Pharmacology and Toxicology, Beijing, 100850, China;4. State Key Laboratory of Pathogen and Biosecurity, Beijing Institute of Microbiology and Epidemiology, Beijing, 100071, China |
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| Abstract: | Thin films of La1.61GeO5−δ, a new oxide ionic conductor, were fabricated on dense polycrystalline Al2O3 substrates by a pulsed laser deposition (PLD) method and the effect of the film thickness on the oxide ionic conductivity was investigated on the nanoscale. The deposition parameters were optimized to obtain La1.61GeO5−δ thin films with stoichiometric composition. Annealing was found necessary to get crystalline La1.61GeO5−δ thin films. It was also found that the annealed La1.61GeO5−δ film exhibited extraordinarily high oxide ionic conductivity. Due to the nano-size effects, the oxide ion conductivity of La1.61GeO5−δ thin films increased with the decreasing thickness as compared to that in bulk La1.61GeO5−δ. In particular, the improvement in conductivity of the film at low temperature was significant .The electrical conductivity of the La1.61GeO5−δ film with a thickness of 373 nm is as high as 0.05 S cm− 1 (log(σ/S cm− 1) = − 1.3) at 573 K. |
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