Growth and high-temperature properties of gallium orthophosphate |
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| Affiliation: | 1. Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany;2. University of Applied Studies and Research, Wernigerode, Germany, Friedrichstraβe 57-59, D-38855 Wernigerode, Germany;3. Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA;1. Key Laboratory of Gas and Fire Control for Coal Mines, Ministry of Education, China University of Mining and Technology, Xuzhou 221116, China;2. School of Safety Engineering, China University of Mining and Technology, Xuzhou 221116, China;3. State Key Laboratory of Coal Resources and Mine Safety, China University of Mining and Technology, Xuzhou 221116, China;1. Department of Nanotechnology, Faculty of Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran 1411713116, Iran;2. School of Metallurgy and Materials Engineering, Iran Universities of Science and Technology, Tehran 1684613114, Iran;3. Faculty of Electrical and Computer Engineering, Tarbiat Modares University, P.O. Box 14115-194, Tehran 1411713116, Iran |
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| Abstract: | GaPO4 crystals were grown from solutions of aqueous phosphoric acid. A critical factor influencing the high-temperature behaviour of the material is its content of −OH groups, which was determined by FT-IR spectroscopy. From an Arrhenius plot of the electrical conductivity of platinum electroded crystals, a single activation energy of 1.68 ± 0.07 eV to temperatures of about 950 °C was derived irrespective of the source of the crystals. A conduction model based on proton migration via a hydrogen bridge bond between an OH group and an adjacent oxygen ion is proposed. |
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