Spin-flip effect on electrical transport in magnetic quantum wire systems |
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| Institution: | 1. Computational Physical Sciences Research Laboratory, Department of Nano-Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran, Iran;2. Department of Physics, Tehran Payame-Noor University, Fallahpour St. Nejatollahi St. Tehran, Iran;3. Physics Group, Faculty of Science, Shahrekord University, P.O. Box 115, Shahrekord, Iran;1. Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland;2. Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland;3. Institute of Molecular Physics, Polish Academy of Sciences, ul. M. Smoluchowskiego 17, 60-179 Poznań, Poland;1. Université de Carthage, Institut Préparatoire aux Etudes Scientifiques et Techniques, Laboratoire Matériaux-Molécules et Applications, BP51, La Marsa 2070, Tunisia;2. Université de Tunis, Ecole Nationale Supérieure des Ingénieurs de Tunis, 5 Rue Taha Hussein - Montfleury, 1008 Tunis, Tunisia;1. Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran;2. Depertment of Electrical and Computer Engineering, University of Kashan, Kashan, Iran;3. Technical and Vocational University, Kashan, Iran;1. Faculty of Physics, University of Bucharest, Bucharest, Romania;2. Faculty of Applied Sciences, “Politehnica” University of Bucharest, Bucharest, Romania |
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| Abstract: | We investigate the spin-flip effect on electronic transport in a nanostructure composed of two nonmagnetic (NM) leads separated by a periodic spacer. The spacer is composed of one-dimensional heterostructure formed by a sequence of magnetic (A) and nonmagnetic (B) sites periodically juxtaposed (as in a typical periodic quantum dot (QD)). The calculations are based on the tight-binding model and transfer matrix method, which compute the current–voltage characteristic within the Landauer–Büttiker formalism. Our main goal is to assess the contribution of the spin-flip scattering to the transport properties of such systems. The spin-dependent transport behavior can be controlled via a gate magnetic field and an applied voltage in the ballistic regime. Our results show that the conductance strongly depends on the configurations of the magnetic QD. The application of the predicted results may be useful in designing spin-valve devices, such as spin-polarized molecular transistors. |
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