aDepartment of Physics, Berhampur University, Berhampur 760007, Orissa, India
bDepartment of Physics, Temple University, Philadelphia, PA 19122, USA
Abstract:
We derive a theory of the temperature-dependent Knight shift in narrow-gap semiconductors. As an example, we calculate the temperature variation of the Knight shift of 207Pb in p-PbTe, which agrees fairly well with experiment.