| ELECTRONIC AND OPTICAL PROPERTIES OF WURTZITE GaN:——A THEORETICAL APPROACH |
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| 引用本文： | 杨中芹,徐至中.ELECTRONIC AND OPTICAL PROPERTIES OF WURTZITE GaN:——A THEORETICAL APPROACH[J].中国物理 B,1997,6(8):597-605. |
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| 作者姓名： | 杨中芹 徐至中 |
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| 作者单位： | State Key Laboratory of Applied Surface Physics and T.D. Lee Physics Laboratory, Fudan University, Shanghai 200433, China;State Key Laboratory of Applied Surface Physics and T.D. Lee Physics Laboratory, Fudan University, Shanghai 200433, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China. |
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| 摘 要： | The band structures of wurtzite GaN(α-GaN) are studied using the nearest and second-nearest neighbour semi-empirical tight-hinding method in sp3 s* model. The calculated direct fundamental gap of α-GaN is 3.45 eV, which is in good agreement with the experimental data. The density of states and the imaginary pert of dielectric function (ε2 (ω)) are evaluated to he in the regions - 10.0 - 12 eV and (1.0 - 10.0 eV, respectively. There are mainly three peaks at 6,4, 7,5, 8.4 eV, dominating the ε2(ω) spectrum. The two components of the ε2(ω) (i. e. ε2xy(ω) and ε2z(ω) ) are also calculated; and the real prat of dielectric function, reflectivity, absorption coefficient, and refractive index are all studied.
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