Finite-element calculation of the influence of interdiffusion on eigenstates in a GaAs/Al x Ga1-x As single-quantum-well structure |
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| Authors: | An Ping Zhao S. R. Cvetkovic Zuo Ya Yang |
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| Affiliation: | (1) Department of Electrical Engineering and Electronics, Brunel University, UB8 3PH Uxbridge, Middlesex, UK;(2) Department of Electronic and Electrical Engineering, University of Surrey, GU2 5XH Guildford, Surrey, UK |
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| Abstract: | The influence of interdiffusion on eigenstates in an interdiffusion-induced GaAs/AlxGa1-xAs single-quantum-well structure is analysed numerically by the finite element method. In this approach, the confinement potential profile of the interdiffused quantum well structure is nonlinear and is modelled by an error function and, in particular, the nature of the effective mass of an electron is considered. The results show that the number of eigenstates and energy levels varies with the extent of the interdiffusion. Numerical results for the quasi-bound states in the quantum well structure with an applied electric field are also presented. |
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