Phonon thermal conductivity of amorphous selenium doped by germanium

The thermal conductivity of the amorphous semiconducting system Se-Ge in the temperature range of 100 to 300°K was measured. The Debye model was used for the analysis of the experimental values and the calculated mean free path of phonons was related to the size of the basic structure units of the selenium glass. The shift of the thermal conductivity of amorphous selenium doped with germanium was explained by means of the increase of the velocity of sound observed together with the occurrence of the covalent bond Se-Ge between the basic structure units of the studied amorphous system.