Scaling the c-axis resistive transitions of single crystalline La1.86Sr0.14CuO4 for fields parallel to the c-axis

It was recently suggested that the out-of-plane resistive dissipation in the high-T _c systems could be quantitatively described in terms of the extended Josephson coupling model that accounts for both effective thermal energy and unusual anisotropy. This model is further confirmed in the present work by scaling the c-axis resistive transition data for Hc observed in single crystalline La_1.86Sr_0.14CuO₄ onto a single curve, in which only parameters extracted from experiments are used. We also argue the difficulty of the other dissipation models as a dominating origin of the field-induced broadening of c-axis resistive transition for Hc.