| 高压光开关器件的设计 |
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| 引用本文： | 曹均凯,但伟. 高压光开关器件的设计[J]. 半导体光电, 2000, 21(1): 56-58 |
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| 作者姓名： | 曹均凯 但伟 |
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| 作者单位： | 重庆光电技术研究所!重庆400060 |
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| 摘 要： | 详细叙述了一种高压光电晶闸管的结构及参数设计 ,用最优化方法确定出长基区宽度 ,选取了最佳的工艺途径及材料参数。简单介绍了实验研究及结果 ,并进行了简要的讨论。
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| 关 键 词： | 光开关 光控可控硅 高压晶闸管 |
| 修稿时间： | 1999-07-08 |
Design of High-voltage Light Switch Device |
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| CAO Jun kai,DAN Wei. Design of High-voltage Light Switch Device[J]. Semiconductor Optoelectronics, 2000, 21(1): 56-58 |
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| Authors: | CAO Jun kai DAN Wei |
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| Abstract: | The structure and parameter design of a high-voltage light activated power thyristor are described in detail.By using optimization method its long base region width is determined and the way of optimal technology is chosen as well as material parameters.Experiment research and its results are introducted,followed by brief discussion on the difference between the results and design. |
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| Keywords: | light switch light activated power thyristor high-voltage thyristor |
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