Epitaxial graphene: the material for graphene electronics |
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| Authors: | M Sprinkle P Soukiassian W A de Heer C Berger E H Conrad |
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| Institution: | 1. The Georgia Institute of Technology, Atlanta, Georgia 30332‐0430, USA;2. Commissariat a l'Energie Atomique, Saclay, 91191 Gif sur Yvette, France;3. CNRS Institut Néel, BP166, 38042 Grenoble, France |
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| Abstract: | The search for an ideal graphene sheet has been a quest driving graphene research. While most research has focused on exfoliated graphene, intrinsic substrate interactions and mechanical disorder have precluded the observation of a number of graphene's expected physical properties in this material. The only graphene candidate that has demonstrated all the essential properties of an ideal sheet is multilayer graphene grown on the SiC(000 ) surface. Its unique stacking allows nearly all the sheets in the stack to behave like isolated graphene, while the weak graphene‐graphene interaction prevents any significant doping or distortion in the band near the Fermi level. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 81 15 − z 81 05 Zx |
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