XPS calibration study of thin‐film nickel silicides

This paper presents a systematic X‐ray photoelectron spectroscopy (XPS)study of the Ni silicides Ni₃Si, Ni₃₁Si₁₂, Ni₂Si, NiSi and NiSi₂ produced by annealing of sputtered thin films. The in situ XPS study focuses on both the core level peaks and Auger peaks. The peak positions, shapes, satellites as well as Auger parameters are compared for different silicides. The factors that influence the Ni core level peak shifts are discussed. The Ni 2p_3/2 peak shape and satellites are correlated with the valence band structure. The effect of argon ion etching on surface composition and chemical states is also investigated. Copyright © 2009 John Wiley & Sons, Ltd.