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50~110 nm波段高反射率多层膜的设计与制备
引用本文:李存霞,王占山,王风丽,朱京涛,吴永荣,王洪昌,程鑫彬,陈玲燕.50~110 nm波段高反射率多层膜的设计与制备[J].光子学报,2007,36(10):1862-1866.
作者姓名:李存霞  王占山  王风丽  朱京涛  吴永荣  王洪昌  程鑫彬  陈玲燕
作者单位:同济大学精密光学工程技术研究所物理系 上海200092
基金项目:国家自然科学基金(60378021,10435050),863项目(2005AA843031),教育部新世纪优秀人才支持计划(NCET-04-0376),同济大学理科发展基金资助项目
摘    要:阐述了50~110 nm强吸收波段亚四分之一波长多层膜的设计方法.这种膜系是由强吸收材料叠加而成,每层膜光学厚度小于四分之一个波长.与常规周期多层膜相比,这种膜系更适用于提高强吸收波段的反射率.利用该方法设计了50 nm处高反射多层膜,并以此为初始条件通过Levenberg-Marquart优化方法完成了50~110 nm强吸收波段宽带高反射率Si/W/Co多层膜的设计,其平均反射率达到45%.采用直流磁控溅射方法制备了Si/W/Co多层膜,用X射线衍射仪(XRD)对膜层结构进行了测试,测试结果表明制作出的多层膜结构与设计结构基本相符.

关 键 词:亚四分之一波长  多层膜  极紫外  高反射率  磁控溅射
文章编号:1004-4213(2007)10-1862-5
收稿时间:2006-05-15
修稿时间:2006-05-08

Design and Fabrication of High Reflection Multilayer for the Wavelength Range 50~110 nm
LI Cun-xia, WANG Zhan-shan, WANG Feng-li, ZHU Jing-tao, WU Yong-rong, WANG Hong-chang, CHENG Xin-bin,CHEN Ling-yan.Design and Fabrication of High Reflection Multilayer for the Wavelength Range 50~110 nm[J].Acta Photonica Sinica,2007,36(10):1862-1866.
Authors:LI Cun-xia  WANG Zhan-shan  WANG Feng-li  ZHU Jing-tao  WU Yong-rong  WANG Hong-chang  CHENG Xin-bin  CHEN Ling-yan
Institution:Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China
Abstract:A design method of sub-quarter-wave multilayers with enhanced normal reflectance in the strong absorbing range 50~110 nm has been presented.The multilayers consisted in the superposition of a few layers of strong absorbing materials.The optical thickness of each layer in the multilayers is less than quarter-wave thickness.Compared to the standard multilayers,this multilayer structure more suits to enhance reflectance of strong absorbing wavelength range.High reflectance multilayers Si/W/Co was designed at wavelength of 50 nm by using this method,and then optimized based on this initial condition by using Levenberg-Marquart algorithm in a wide wavelength range 50~110 nm.The calculated results suggest that the reflectance of the multilayer is as high as 45%.The sample was fabricated by using a high vacuum direct current magnetron sputtering.Then,the multilayer was characterized by a low angle X-ray diffraction.The results suggest that the fabricated multilayer structure meets the design requirement.
Keywords:Sub-quarter-wave  Multilayer  EUV  Reflectivity  Magnetron sputtering
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