Optical properties of indium nitride powder and films

Using photoluminescence and transmission measurements, we have studied the optical properties of indium nitride powder and thin films grown by molecular beam epitaxy. The bandgap for InN powder with electron concentration ∼ 4·10¹⁹ cm⁻³ was 0.94 eV, and for InN films with electron concentrations ∼10¹⁸ cm⁻³ it was 0.7 eV. We have established that when the electron concentration is increased to 8·10¹⁹ cm⁻³, the bandgap of InN increases to 1.0 eV. The change in the bandgap as a function of the concentration is due to the appearance of the Burstein-Moss effect. Report given at the Fifth Belorussian-Russian Seminar on Semiconductor Lasers and Systems Based on Semiconductor Lasers, June 1–5, 2005, Minsk, Belarus. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 86–89, January–February, 2006.