Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering |
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Authors: | S Balaji S Mohan D V S Muthu and A K Sood |
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Institution: | (1) Department of Instrumentation, Indian Institute of Science, 560 012 Bangalore, India;(2) Department of Physics, Indian Institute of Science, 560 012 Bangalore, India |
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Abstract: | Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied
using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber
growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film
increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain
is relieved for film thickness greater than 4 nm.
Dedicated to Professor C N R Rao on his 70th birthday |
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Keywords: | Ion beam sputtering ultra thin Ge films interference enhanced Raman spectroscopy phonon confinement atomic force microscopy |
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