Advanced piezoelectric crystal Ca3TaGa3Si2O14: growth,crystal structure perfection,and acoustic properties |
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Authors: | Dmitry Roshchupkin Luc Ortega Olga Plotitcyna Alexei Erko Ivo Zizak Dmitry Irzhak Rashid Fahrtdinov Oleg Buzanov |
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Affiliation: | 1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow District, Russia 2. Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR 8502, 91405, Orsay Cedex, France 3. Institute for Nanometre Optics and Technology, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein Strasse 15, 12489, Berlin, Germany 4. FOMOS Materials Co., 105023, Buzheninova St. 16, Moscow, Russia
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Abstract: | A five-component crystal of the lanthanum–gallium silicate family Ca3TaGa3Si2O14 (CTGS) was grown by the Czochralski method. The CTGS crystal, like the langasite crystal (La3Ga5SiO14, LGS), possesses unique temperature properties and the fewer number of the Ga atoms in the unit cell makes the density much lower and, consequently, increases the velocity of acoustic wave propagation. The unit-cell parameters were determined by the powder diffraction technique. The defects in the CTGS crystal structure were studied by X-ray topography, which enables the visualization of growth banding characteristics of crystals grown by the Czochralski method. Surface acoustic wave (SAW) propagation in the CTGS crystal was investigated by the high-resolution X-ray diffraction method on the BESSY II synchrotron radiation source. The velocities of propagation and power flow angles of SAWs in the Y- and X-cuts of the CTGS crystal were determined from the X-ray diffraction spectra. |
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