Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting |
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Authors: | Kong Liu Shengchun Qu Xinhui Zhang Furui Tan Yu Bi Shudi Lu Zhanguo Wang |
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Institution: | 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China 2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China
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Abstract: | We fabricated sulfur-doped black silicon by metal-assist chemical etching (MCE) and ion implanting. The morphologies of silicon nanowire (SiNW) arrays and the concentration of sulfur in black silicon were analyzed by scanning electron microscope (SEM). Sulfur-doped black silicon shows higher absorption in entire 0.3–2.5 μm wavelength range as compared to undoped SiNW arrays and flat silicon. The changes in the absorption spectra of black silicon with different etching durations and annealing temperature are also shown. Upon annealing, the absorption decreases significantly in 2–2.5 μm wavelength region. The novel results clearly indicate that sulfur implanting could produce below band gap absorption in the silicon substrate. |
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