Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices |
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| Authors: | Dinglin Xu Ying Xiong Minghua Tang Baiwen Zeng |
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| Institution: | 1. Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan, Hunan, 411105, China
2. The School of Mathematics and Computational Science, Xiangtan University, Xiangtan, Hunan, 411105, China
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| Abstract: | Lanthanum-doped ZnO (Zn0.99La0.01O) polycrystalline thin films were deposited on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. Metal/La-doped ZnO/Pt sandwich structures were constructed by depositing different top electrodes (Ag and Pt). Unipolar switching and bipolar switching characteristics were investigated in Pt/La-doped ZnO/Pt and Ag/La-doped ZnO/Pt structures, respectively. Compared with the undoped devices (Pt/ZnO/Pt and Ag/ZnO/Pt), the La-doped devices exhibits superior resistive switching performances, such as narrow distribution of the resistive switching properties (R ON, R OFF, V Set, and V Reset), higher R OFF/R ON ratio and sharp switching transition. |
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