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Optical excitation study on the efficiency droop behaviors of InGaN/GaN multiple-quantum-well structures |
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| Authors: | Yuanping Sun Hongying Guo Lihua Jin Yong-Hoon Cho E-K Suh H J Lee R J Choi Y B Hahn |
| Institution: | 1. Institute of Science and Technology for Opto-Electronic Information, Yantai University, Yantai, 264005, China 2. Department of Physics and Graduate School of Nanoscience and Technology (WCU), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305-701, Republic of Korea 3. Department of Semiconductor Science and Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju, 561-756, Korea 4. School of Chemical Engineering, Chonbuk National University, Chonju, 561-756, Korea |
| Abstract: | Efficiency droop is generally observed in electroluminescence under high current injection. Optical characterization on efficiency droop in InGaN/GaN multiple-quantum-well structures has been conducted at 12 K. Clear droop behaviors were observed for the sample excited by above-bandgap excitation of GaN with pulse laser. The results show that dislocation is not the crucial factor to droop under high carrier density injection, and Auger recombination just slightly affects the efficiency. The radiative recombination may be mainly affected by a multi-carrier-related process (diffusion and drift with a factor of n 3.5 and n 5.5) at the interface between GaN barrier and InGaN well. |
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