Atomic layer deposition of TiO2−xNx thin films for photocatalytic applications |
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| Institution: | 1. IRT Jules Verne, Chemin du Chaffault, 44340 Bouguenais, France;2. IMN Jean Rouxel UMR 6502, 2 rue de la Houssinière - BP 32229, 44322 NANTES Cedex 3, France;3. Plasma & Coatings Physics Division, IFM Materials Physics, Linköping University, Linköping, SE 581-83, Sweden;4. Institut de Recherche en Génie Civil et Mécanique, Université de Nantes, CNRS, 58, rue Michel-Ange, BP 420, 44606 Saint-Nazaire, France |
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| Abstract: | Titanium dioxide (TiO2) is recognized as the most efficient photocatalytic material, but due to its large band gap energy it can only be excited by UV irradiation. Doping TiO2 with nitrogen is a promising modification method for the utilization of visible light in photocatalysis. In this work, nitrogen-doped TiO2 films were grown by atomic layer deposition (ALD) using TiCl4, NH3 and water as precursors. All growth experiments were done at 500 °C. The films were characterized by XRD, XPS, SEM and UV–vis spectrometry. The influence of nitrogen doping on the photocatalytic activity of the films in the UV and visible light was evaluated by the degradation of a thin layer of stearic acid and by linear sweep voltammetry. Light-induced superhydrophilicity of the films was also studied. It was found that the films could be excited by visible light, but they also suffered from increased recombination. |
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