树形结构Si/ZnO纳米线阵列的制备及光学性能

用一种低成本的方法制备出了树形结构Si/ZnO纳米线阵列。首先在室温条件下用金属辅助化学腐蚀法在Si(100)衬底上制备了Si纳米线阵列,Si纳米线的直径尺寸及分布都很均匀,通过改变腐蚀时间,能够得到高度不同的Si纳米线阵列。利用磁控溅射在Si纳米线表面制备一层ZnO薄膜,然后利用水热法在Si纳米线阵列上生长了ZnO纳米线。通过扫描电子显微镜(SEM)、能谱分析仪(EDS)和光致发光(PL)测试对样品进行了表征。通过这种方法制备的Si/ZnO复合结构在太阳能电池、光催化等领域有潜在应用价值。

Synthesis and Optical Properties of Si/ZnO Branched Nanowire Arrays

A low-cost approach for fabricating Si/ZnO branched nanowire arrays was reported.The Si nanowire arrays were prepared on Si(100) substrate using a metal-assisted chemical etching process at room temperature.The diameter and distribution are uniform,and the length of Si nanowire could be tuned by varying the etching time.The ZnO film on the surface of Si nanowire was obtained by magnetron sputtering method and then the ZnO nanowires were prepared via hydrothermal method.The samples were characterized by field-emission scanning electron microscopy(SEM),energy dispersive X-ray spectroscopy(EDS) and photoluminescence(PL).The Si/ZnO branched nanowire arrays are suitable for applications in photovoltaic and photocatalysis.