| 980nm半导体激光器腔面膜钝化新技术 |
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| 引用本文： | 李再金,李特,芦鹏,曲轶,薄报学,刘国军,王立军. 980nm半导体激光器腔面膜钝化新技术[J]. 发光学报, 2012, 33(5): 525-528. DOI: 10.3788/fgxb20123305.0525 |
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| 作者姓名： | 李再金 李特 芦鹏 曲轶 薄报学 刘国军 王立军 |
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| 作者单位： | 1. 长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022;2. 中国科学院 长春光学精密机械与物理研究所, 吉林 长春 130033 |
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| 基金项目： | 国家自然科学基金，吉林省科技发展计划 |
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| 摘 要： | 研究了不同腔面钝化方法对980 nm渐变折射率波导结构InGaAs/AlGaAs半导体激光器输出激光功率的影响.将980 nm半导体激光器管芯前后腔面不蒸镀钝化膜与蒸镀Si钝化膜和蒸镀ZnSe钝化膜的方法进行了对比.结果表明,蒸镀ZnSe钝化膜比蒸镀Si钝化膜的半导体激光器输出光功率提高了11％,比不蒸镀钝化膜的半导体...
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| 关 键 词： | 半导体激光器 腔面 钝化 |
| 收稿时间： | 2011-12-15 |
The Novel Passivation Method for 980 nm Semiconductor Laser Diode Face Coating |
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| LI Zai-jin , LI Te , LU Peng , QU Yi , BO Bao-xue , LIU Guo-jun , WANG Li-jun. The Novel Passivation Method for 980 nm Semiconductor Laser Diode Face Coating[J]. Chinese Journal of Luminescence, 2012, 33(5): 525-528. DOI: 10.3788/fgxb20123305.0525 |
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| Authors: | LI Zai-jin LI Te LU Peng QU Yi BO Bao-xue LIU Guo-jun WANG Li-jun |
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| Affiliation: | 1. Changchun University of Science and Technology, Changchun 130022, China;2. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China |
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| Abstract: | The effect of the output power on difference passivation facet in 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied.The output power of the 980 nm laser diodes with no facet passivation,Si passivation,and ZnSe passivation at the front and the back facet were compared.The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method,and is 42% higher than no facet passivation.The laser diode of no facet passivation is failure at the current is 4.1 A,the Si passivation is 5.1 A,ZnSe passivation is 5.6 A.The reasons of failure for difference passivation were analyzed.In conclusion,the method of ZnSe passivation facet can increase the output power of semiconductor lasers. |
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| Keywords: | laser diode facet passivation |
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