| ZnO薄膜近带边紫外发光的研究 |
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| 引用本文： | 黎小平,曹培江,宿世臣,贾芳,柳文军,朱德亮,马晓翠,吕有明. ZnO薄膜近带边紫外发光的研究[J]. 发光学报, 2012, 33(5): 481-485. DOI: 10.3788/fgxb20123305.0481 |
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| 作者姓名： | 黎小平 曹培江 宿世臣 贾芳 柳文军 朱德亮 马晓翠 吕有明 |
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| 作者单位： | 1. 深圳大学材料学院 深圳市特种功能材料重点实验室, 广东 深圳 518060;2. 华南师范大学 光电子材料与技术研究所, 广东 广州 510631 |
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| 基金项目： | 国家自然科学基金，深圳市科技计划项目，深圳市特种功能材料重点实验室开放基金 |
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| 摘 要： | 用ZnO陶瓷靶,采用脉冲激光沉积(PLD)技术在c-Al2O3衬底上制备了ZnO薄膜。通过不同温度下光致发光(PL)光谱的测量,对样品的紫外发光机理进行研究。 在较低温度(10 K)下的PL光谱中,观测到一个位于3.354 eV处的束缚激子(D0X)发射,随着温度的升高(~50 K),在D0X的高能侧观测到了自由激子的发射峰。在10 K温度下,3.309 eV处出现了一个较强的发光带A,此发光带强度随着温度升高先增大然后减小,并且一直延续到室温。重点讨论了此发光带的起源,并认为A带可归属于自由电子-受主之间的复合发射。
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| 关 键 词： | 脉冲激光沉积 ZnO薄膜 光致发光 |
| 收稿时间： | 2012-01-16 |
Investigation on Near Band Edge UV Luminescence of ZnO Thin Films |
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| LI Xiao-ping , CAO Pei-jiang , SU Shi-chen , JIA Fang , LIU Wen-jun , ZHU De-liang , MA Xiao-cui , LV You-ming. Investigation on Near Band Edge UV Luminescence of ZnO Thin Films[J]. Chinese Journal of Luminescence, 2012, 33(5): 481-485. DOI: 10.3788/fgxb20123305.0481 |
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| Authors: | LI Xiao-ping CAO Pei-jiang SU Shi-chen JIA Fang LIU Wen-jun ZHU De-liang MA Xiao-cui LV You-ming |
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| Affiliation: | 1. School of Material Science, Shenzhen University, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518060, China;2. Institute of Optoelectronic Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
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| Abstract: | High orientated undoped ZnO thin films were prepared on c-Al2O3 substrates by pulsed laser deposition(PLD) method and using ZnO ceramic target as resource material.The photoluminescence(PL) origin of the ZnO thin films was discussed in detailed.PL spectrum of ZnO thin films is dominated by donor-bound exciton(D0X)emission at low temperatures while the free exciton transition(FX) gradually dominates the spectrum at higher temperatures.It notes that one emission band A at around 3.309 eV(T=10 K) can be clearly observed with increase in temperature up to room temperature.The mechanism of this emission band was investigated by the temperature dependence of PL spectra.The results can be attributed to the transition of conduction band electrons to acceptors(e,A0),in which the acceptor binding energy was approximately 129 meV.However,the formation mechanism of the acceptor states need be investigated further. |
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| Keywords: | pulsed laser deposition ZnO thin films photoluminescence |
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