Determination of transport coefficients in semiconductors for mixed scattering of current carriers on acoustic lattice vibrations and ionized impurities

Two methods are presented for the determination of some parameters in semiconductors for mixed scattering of current carriers. One method requires a knowledge of the effective mass, the other requires a knowledge of the mobility caused by the scattering of current carriers on acoustic lattice vibrations. The necessary dependences are presented in the form of graphs and tables.The author expresses his thanks to Prof. E. Klier and Dr. P. Höschl for comments on and discussion of this paper.