Study of a subfluoride process for production of high-purity silicon |
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| Authors: | A. G. Vodop’yanov G. N. Kozhevnikov V. G. Kuz’min |
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| Affiliation: | 1.Institute of Metallurgy, Ural Branch,Russian Academy of Sciences,Yekaterinburg,Russia;2.Kyshtym Mining and Processing Combine,Open Joint-Stock Company,Kyshtym, Chelyabinsk oblast,Russia |
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| Abstract: | Process was studied in which high-purity silicon (1.07–1.35 ppm) is obtained from powdered technical-grade silicon (99.81–99.86% Si) produced by acid refining to remove impurities by its treatment with gaseous SiF4 at a temperature of 1200°C to give pure SiF2 (gas), with its subsequent decomposition at temperatures lower than 800°C into silicon and SiF4 (gas) circulating in the system. |
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