Theoretical and experimental investigations on the deposition rate and processes of parallel incident laser-induced CVD

A theoretical analysis of and experimental observations on a parallel incident laser-induced deposition rate are reported. Our theory predicts that the maximum deposition rate depends on the photo-traveling length, the scattering cross section of the reactant gases and their partial pressure. This result is applied to SiO₂ deposition using monosilane and nitrous oxide for reactant gases, and is compared with experimental results. We show that the deposition rate of SiO₂ films as a function of the incident light power and the partial pressure of reactant gases predicted by the present theory well explains our experimental results. A supply-limitation phenomenon of the reactant gases and a method of estimating deposition efficiencies are also discussed.