铁电存储单元单粒子效应的仿真与研究

运用电路仿真研究了单粒子瞬态脉冲效应对铁电存储单元存储特性的影响。结合单粒子对MOS器件的影响,用电流模拟单粒子对存储单元的影响且进行仿真分析。仿真结果表明脉冲电流峰值越高,时间越长,铁电存储单元越容易翻转。经分析得出了铁电电容翻转是由瞬态电流脉冲产生的单位面积电荷量决定,最后解释了翻转的原因。

Simulation and Study on SEE of the Ferroelectric Memory Cell

This article have studied the effects of the single event transient on the ferroelectric memory cell with circuit simulation.Combined with the effects of the single event effect(SEE) on MOS devices,the effect of single event on the memory cell has been simulated by using the current to simulate the single event.The simulation results show that the higher and longer the peak pulse current,the ferroelectric memory cell flips more easily.After analysis,the flip of ferroelectric memory cell is decided by the charge accumulation per unit area on the ferroelectric capacitor. At last , the cause of the fillip has been analyzed.