| 非晶态硅氢结构及其缺陷态的蒙特卡罗模拟 |
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| 引用本文： | 陆献平,吴翔. 非晶态硅氢结构及其缺陷态的蒙特卡罗模拟[J]. 计算物理, 1985, 2(3): 380-385 |
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| 作者姓名： | 陆献平 吴翔 |
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| 作者单位： | 同济大学固体物理研究室 |
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| 摘 要： | 本文在考虑了悬挂键的情况下,用蒙特卡罗方法模拟了非晶态硅氢结构,径向分布函数等统计量和实验基本相符。氢原子的结合形式也和实验基本一致。
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| 收稿时间： | 1984-12-27 |
| 修稿时间： | 1985-05-16 |
THE MONTE CARLO SIMULATION FOR THE STRUCTURE AND THE DEFECT STATES OF a-Si:H |
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| Lu Xian-ping,Wu Xiang. THE MONTE CARLO SIMULATION FOR THE STRUCTURE AND THE DEFECT STATES OF a-Si:H[J]. Chinese Journal of Computational Physics, 1985, 2(3): 380-385 |
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| Authors: | Lu Xian-ping Wu Xiang |
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| Affiliation: | Pohl-Institute of Solid State Physics, Tongji University |
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| Abstract: | In this paper the function of dangling bound is considered and the structure of hydrogepated amorphous silicon is simulated by Monte Carlo Method. The radiai distrioution functions and other statistical quantities are agreement with experimental data. The incorporation form of hydrogen atom is also qualitative consitent with the knowledge from experiments. |
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