THE OCCUPATION FUNCTION OF LOCALIZED STATES IN AMORPHOUS SEMICONDUCTORS CALCULATED FROM THE ENTI RE TRANSIENT PHOTOCURRENT SPECTRA

The occupation function of localized states in amorphous semiconductors is calculated from the entire transient photocurrent spectra. We find that the occupation function does not exhibit any abrupt change for the observation time shorter and longer than the monoqlecular recombination lifetime τ_MR. This result is opposed to previous conclusion. Our'result is independent of the specific shape of. the density of localized states.