| 光电耦合器的反应堆中子辐射效应 |
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| 引用本文： | 黄绍艳,刘敏波,唐本奇,肖志刚,王祖军,张勇.光电耦合器的反应堆中子辐射效应[J].强激光与粒子束,2011,23(3). |
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| 作者姓名： | 黄绍艳 刘敏波 唐本奇 肖志刚 王祖军 张勇 |
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| 作者单位： | 西北核技术研究所, 西安 710024 |
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| 摘 要： | 选择3种典型光电耦合器开展了反应堆中子辐照实验，中子注量为3×1011~5×1012cm-2时，位移效应导致电流传输比下降，饱和压降提高。发光器件相同,探测器为Si PIN光电二极管的光电耦合器比探测器为Si NPN光敏晶体管的光电耦合器的初始电流传输比要小，但其抗位移损伤能力更强。探测器均为Si NPN光敏晶体管，发光器件为异质结LED要比硅两性掺杂LED的光电耦合器的电流传输比抗位移损伤能力提高2个量级；以光敏晶体管为探测器的光电耦合器，在较大的正向电流和输出负载电阻条件下工作可提高抗辐射水平。此外，光电耦合器的位移损伤存在加电退火效应。
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| 关 键 词： | 光电耦合器 光敏晶体管 反应堆中子 电流传输比 饱和压降 |
| 收稿时间： | 1900-01-01; |
Effect of reactor neutron irradiation on optocouplers |
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| Huang Shaoyan,Liu Minbo,Tang Benqi,Xiao Zhigang,Wang Zujun,Zhang Yong.Effect of reactor neutron irradiation on optocouplers[J].High Power Laser and Particle Beams,2011,23(3). |
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| Authors: | Huang Shaoyan Liu Minbo Tang Benqi Xiao Zhigang Wang Zujun Zhang Yong |
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| Institution: | Northwest Institute of Nuclear Technology, P. O. Box 69-10, Xi’an 710024, China |
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| Abstract: | The reactor neutron irradiation on three types of optocouplers was experimentally studied. Current transfer ratio decreased and saturation voltage increased due to displacement damage in the range of neutron fluence from 3×1011 cm-2 to 5×1012cm-2. The degradation of light emitting diode(LED) optical power, phototransistor gain and photoresponsivity all contribute to the degradation of optocouplers’ performance. The optocouplers with PIN as detector have a much lower current transfer ratio but they are more resistant to displacement damage compared with optocouplers with phototransistor as detector on condition that both kinds of optocouplers use identical LEDs. The radiation tolerance of optocouplers with heterojunction LED is two orders of ma |
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| Keywords: | phototransistor reactor neutron current transfer ratio saturation voltage |
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