| 掺铍GaAs量子阱的光致荧光 |
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| 引用本文： | 程文芹,梅笑冰,周均铭,刘玉龙,朱恪. 掺铍GaAs量子阱的光致荧光[J]. 物理学报, 1993, 42(5): 864-866 |
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| 作者姓名： | 程文芹 梅笑冰 周均铭 刘玉龙 朱恪 |
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| 作者单位： | 中国科学院物理研究所,北京100080;中国科学院物理研究所,北京100080;中国科学院物理研究所,北京100080;中国科学院物理研究所,北京100080;中国科学院物理研究所,北京100080 |
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| 摘 要： | 测量了掺铍的,阱宽约为10nm的GaAs量子阱在4.2K的光致荧光。掺杂浓度分别为1×1017和5×1018cm-3。测量结果表明:对于无规掺杂,局域在阱中心的铍的状态密度与导带电子从n=1量子能级到阱中心中性铍的跃迁概率的乘积大于对应于介面铍的乘积。另外,实验结果也表明:当掺杂浓度升高时,由于带隙收缩的影响,阱中心铍的电离能减小。
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| 关 键 词： | 砷化镓 量子阱 光致发光 荧光 铍 |
| 收稿时间： | 1992-06-30 |
PHOTOLUMINESCENCE OF Be-DOPED-GaAs QUANTUM WELLS |
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| CHENG WEN-QIN,MEI XIAO-BING,ZHOU JUN-MING,LIU YU-LONG and ZHU KE. PHOTOLUMINESCENCE OF Be-DOPED-GaAs QUANTUM WELLS[J]. Acta Physica Sinica, 1993, 42(5): 864-866 |
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| Authors: | CHENG WEN-QIN MEI XIAO-BING ZHOU JUN-MING LIU YU-LONG ZHU KE |
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| Abstract: | The photoluminescence of Be-doped GaAs quantum wells with width of 10 nm was measured at 4.2 K. The doping concentration is about 1×1017 and 5×1018cm-3. The results showed that the product of the density of states of acceptors and the probability of transition from conduction subband n=l to neutral acceptors at the well center is larger than that near the interface of GaAs and AlGaAs. In addition, the ionization energy of acceptors is decreased as doping concentration is increased. It is due to band-gap narrowing with the doping concentration of p-type GaAs. |
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