Thermal expansion coefficients of rare earth metal disilicides and their influence on the growth of disilicide nanowires |
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| Authors: | J.J. Yang C.J. Rawn C.-X. Ji Y.A. Chang Y. Chen R. Ragan D.A.A. Ohlberg R.S. Williams |
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| Affiliation: | (1) Department of Materials Science and Materials Science Program, University of Wisconsin-Madison, 1509 University Avenue, 53706 Madison, WI, USA;(2) Metals and Ceramics Division, Oak Ridge National Laboratory, 37831 Oak Ridge, TN, USA;(3) Quantum Science Research, Hewlett-Packard Laboratories, 1500 Page Mill Road, MS 1123, 94304 Palo Alto, CA, USA |
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| Abstract: | The lattice parameters of rare earth metal disilicides at high temperature play a crucial role in the growth of these disilicide nanowires, which takes place at about 873 K. In the present study, the lattice parameters of Sm, Gd, Tb, Dy, Ho, Er, Sc and ErxGd1-x disilicides with AlB2 structure were measured from room temperature to about 873 K by high temperature X-ray diffraction (HTXRD), from which the linear coefficient of thermal expansion (CTE) along each crystallographic axis was determined. The influence of the CTEs on the growth of nanowires will be discussed in terms of anisotropic strain. With these CTEs, the composition of a ternary disilicide, (ErxGd1-x)Si1.67, for example, with optimal lattice parameters at nanowire growth temperature can be engineered to meet the requirement for the growth of high-quality nanowires. PACS 65.40.De; 68.65.La; 68.55.-a |
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