Transmission electron microscopy study of hexagonal GaN film grown on GaAs (0 0 1) substrate by using AlAs nucleation layer |
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Authors: | L. Wan X. F. Duan H. Chen Hongfei Liu Zhiqiang Li Q. Huang J. M. Zhou |
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Affiliation: | Institute of Physics, Chinese Academy of Science, Beijing 100080, People's Republic of China |
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Abstract: | Hexagonal gallium nitride (h-GaN) films have been grown on AlAs nucleation layer by using radio frequency (RF) plasma source-assisted molecular beam epitaxy on GaAs (0 0 1) substrate. Transmission electron microscopy (TEM) techniques are used to characterize such h-GaN epilayers. TEM results show that (0 0 0 1) atom planes of h-GaN are parallel to (0 0 1) atom planes of the GaAs substrate. Defects, such as stacking faults and dislocations, have also been observed. |
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Keywords: | MBE GaN TEM AlAs nucleation layer |
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