| 光电耦合器不同辐照剂量率下的伽玛总剂量效应 |
| |
| 引用本文： | 黄绍艳,刘敏波,姚志斌,盛江坤,肖志刚,何宝平,王祖军,唐本奇.光电耦合器不同辐照剂量率下的伽玛总剂量效应[J].强激光与粒子束,2014,26(8):084001. |
| |
| 作者姓名： | 黄绍艳 刘敏波 姚志斌 盛江坤 肖志刚 何宝平 王祖军 唐本奇 |
| |
| 作者单位： | 1.西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室, 西安 71 0024 |
| |
| 摘 要： | 开展了光电耦合器在0.01,0.1,1.0和50rad(Si)/s四种剂量率下的伽玛射线(60 Coγ)辐照实验,结果表明:γ辐照导致光电耦合器电流传输比下降,辐照到相同总剂量,电流传输比下降幅度基本上随剂量率的减小而增大。在不拆封破坏光电耦合器的情况下,通过对光电耦合器中的发光二极管I-V特性、光敏晶体管增益及初级光电流的测试,以及耦合介质传输损耗特性的分析,证明了导致光电耦合器电流传输比退化的主导因素是光敏晶体管C-B区光响应度的下降。
|
| 关 键 词： | 光电耦合器 γ总剂量 低剂量率辐照损伤增强 |
| 收稿时间： | 2014/1/3 |
Total dose effect on optocouplers subjected to different dose rate irradiation |
| |
| Institution: | 1.State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi’an 710024,China |
| |
| Abstract: | 60Co irradiation on optocouplers is examined at dose rate of 0.01, 0.1, 1.0 and 50 rad/s. The experimental results show that current transfer ratio decreases after exposure and the amplitude of degradation at a given total dose depends on the dose rate, namely more degradation with lower dose rate. The I-V characteristics of LED, gain and primary photocurrent of phototransistor, and transmission loss in optical coupling medium are tested and analyzed, which lead to a conclusion that photoresponse degradation in C-B region of phototransistor is the main contribution to CTR degradation of optocouplers. |
| |
| Keywords: | optocoupler γ total dose enhanced low dose rate sensitivity |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《强激光与粒子束》浏览原始摘要信息 |
| 点击此处可从《强激光与粒子束》下载免费的PDF全文 |
|
